Installation type | Surface mount |
packing | TR,CT |
series | NexFET™ |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 6-WDFN Exposed Pad |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 2.3W |
FET Type | 2 N-channels(two) |
Drain source voltage (Vdss) | 20V |
Current at 25 ° C - continuous drain (Id) | 5A |
On resistance (maximum) for different Ids and Vgs | 27 mΩ @ 5A,4.5V |
Vgs (th) (maximum) for different Ids | 1.2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 5.4nC @ 4.5V |
Input capacitance at different Vds (Ciss) (maximum) | 469pF @ 10V |
FET function | Logic level gate,5V drive |